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Rev 1:Nov 2004
AO3419, AO3419L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3419L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = -20V ID = -3.5 A RDS(ON) < 75m (VGS = -10V) RDS(ON) < 95m (VGS = -4.5V) RDS(ON) < 145m (VGS = -2.5V) ESD Rating: 2000V HBM
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 12 -3.5 -2.8 -15 1.4 0.9 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 65 85 43
Max 90 125 60
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO3419, AO3419L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.5A -0.65 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.7 -15 59 83 76 111 6.8 -0.81 -0.95 -2 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 5.5 VGS=-4.5V, VDS=-10V, ID=-3.5A 0.8 1.9 5 VGS=-10V, VDS=-10V, RL=2.8, RGEN=3 IF=-3.5A, dI/dt=100A/s 6.7 28 13.5 9.8 2.7 12 13 6.6 620 75 105 95 145 -0.9 Min -20 -0.5 -2.5 1 10 -1.4 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3419, AO3419L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 15 -3.0V 10 5 0 0 1 2 3 -2.5V -2.0V VGS=-1.5V 4 5 10 -9.0V -8.0V -7.0V -6.0V -ID (A) -4.0V 6 -ID(A) 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 ID=-3A, VGS=-4.5V Normalized On-Resistance VGS=-2.5V 1.4 ID=-3.5A, VGS=-10V 125C -10.0V -5.0V 8 VDS=-5V
25C
-VDS (Volts) Fig 1: On-Region Characteristics 160 140 120 RDS(ON) (m) 100 80 60 40 20 0 2 4 6 8 10 0.8 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-10V VGS=-4.5V
1.2
ID=-1A, VGS=-2.5V
1.0
25
50
75
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
200 180 160 RDS(ON) (m) -IS (A) 140 120 100 80 60 40 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C ID=-3.5A
1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 25C 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C
125C
Alpha & Omega Semiconductor, Ltd.
AO3419, AO3419L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics ID=-3.5A Capacitance (pF) 600 800 Ciss
400
200 Crss 0 0
Coss
5
10
15
20
-VDS (Volts) Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150C TA=25C RDS(ON) limited
40 10s 30 Power (W) 100s 1ms
TJ(Max)=150C TA=25C
-ID (Amps)
10.0
20
1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) 10
10ms 0.1s
10
100
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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